頁 909 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS62WV5128DALL-55TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 55NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Supplier Device Package: 32-TSOP II	封裝: 32-SOIC (0.400", 10.16mm Width)	庫存5,712	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	55ns	55ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	32-SOIC (0.400", 10.16mm Width)	32-TSOP II
M45PE20S-VMN6P	Micron Technology Inc.	IC FLASH 2MBIT 75MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,320	FLASH	FLASH - NOR	2Mb (256K x 8)	SPI	75MHz	15ms, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AM29F002BT-55JF	Cypress Semiconductor Corp	IC FLASH 2MBIT 55NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (11.43x13.97)	封裝: 32-LCC (J-Lead)	庫存2,496	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	55ns	55ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (11.43x13.97)
MT41J128M8JP-15E IT:G	Micron Technology Inc.	IC SDRAM 1GBIT 667MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x11.5)	封裝: 78-TFBGA	庫存21,336	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	667MHz	-	-	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x11.5)
IDT71V432S7PF8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 7NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1Mb (32K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7ns Voltage - Supply: 3.135 V ~ 3.63 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存5,280	SRAM	SRAM - Synchronous	1Mb (32K x 32)	Parallel	-	-	7ns	3.135 V ~ 3.63 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS62WV12816BLL-55BI	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 55NS 48MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (6x8)	封裝: 48-TFBGA	庫存12,792	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	55ns	55ns	2.5 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (6x8)
AT28C64B-15SA	Microchip Technology	IC EEPROM 64KBIT 150NS 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封裝: 28-SOIC (0.295", 7.50mm Width)	庫存5,040	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	150ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
MT52L256M64D2QA-125 XT:B	Micron Technology Inc.	IC SDRAM 16GBIT 800MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,776	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	800MHz	-	-	1.2V	-	-	-	-
71T75902S85BG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存3,408	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	-	-	8.5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
CY7C1041G18-15ZSXIT	Cypress Semiconductor Corp	ASYNC SRAMS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,136	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	15ns	15ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	-	-	-
N25Q256A73ESF40F TR	Micron Technology Inc.	IC FLASH 256MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (64M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存3,808	FLASH	FLASH - NOR	256Mb (64M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
M29W320DB70N6E	Micron Technology Inc.	IC FLASH 32MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存13,872	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
71V124SA12YGI8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 12NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	封裝: 32-BSOJ (0.400", 10.16mm Width)	庫存3,600	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
SST26WF016BAT-104I/SN	Microchip Technology	IC FLASH 16MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存78,816	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
25C040T/SN	Microchip Technology	IC EEPROM 4KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,472	EEPROM	EEPROM	4Kb (512 x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
25AA02UIDT-I/SN	Microchip Technology	IC EEPROM 2KBIT 10MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,824	EEPROM	EEPROM	2Kb (256 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS61LPS12836A-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: 100-LQFP	庫存29,364	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
IS43TR16128BL-125KBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存6,276	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
DS24B33S+	Maxim Integrated	IC EEPROM 4KBIT 1WIRE 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: 2.8 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存400,200	EEPROM	EEPROM	4Kb (256 x 16)	1-Wire?	-	-	2µs	2.8 V ~ 5.25 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO
MT53D512M64D4NW-046 WT:D	Micron Technology Inc.	IC DRAM 32G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,952	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
25LC040A/W16K	Microchip Technology	IC EEPROM 4K SPI 10MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存5,840	EEPROM	EEPROM	4Kb (512 x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
MTFC8GLWDQ-3L AAT A	Micron Technology Inc.	MODULE EMMC 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	封裝: 100-LBGA	庫存4,992	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
MT53E1G32D4NQ-053-RS-WT-J	Micron Technology Inc.	LPDDR4 32G 1GX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NS24LS256C4JYTRG	onsemi	IC EEPROM 256KB I2C CMOS 4WLCSP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WLCSP (1x1)	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	4-XFBGA, WLCSP	4-WLCSP (1x1)
CG8632AAT	Infineon Technologies	IC PSOC4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NLQ46PFS-8NET	Insignis Technology Corporation	LPDDR4 4GB X16 2400MHZ CL16 10X1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.2 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-FBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	LVSTL	1.2 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	0°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-FBGA (10x14.5)
24CW160T-I-Q4B	Microchip Technology	16 KBIT I2C SERIAL EEPROM WITH S Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 450 ns Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封裝: -	庫存15,000	EEPROM	EEPROM	16Kbit	I2C	1 MHz	5ms	450 ns	1.6V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
S70FS01GSDSBHI213	Infineon Technologies	IC FLASH 1GBIT SPI/QUAD 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 80 MHz Write Cycle Time - Word, Page: 2ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI	80 MHz	2ms	6 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)

IS62WV5128DALL-55TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II

封裝: 32-SOIC (0.400", 10.16mm Width)

庫存5,712

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

55ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

32-SOIC (0.400", 10.16mm Width)

32-TSOP II

M45PE20S-VMN6P

Micron Technology Inc.

IC FLASH 2MBIT 75MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,320

FLASH

FLASH - NOR

2Mb (256K x 8)

SPI

75MHz

15ms, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AM29F002BT-55JF

Cypress Semiconductor Corp

IC FLASH 2MBIT 55NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.43x13.97)

封裝: 32-LCC (J-Lead)

庫存2,496

FLASH

2Mb (256K x 8)

Parallel

-

55ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (11.43x13.97)

MT41J128M8JP-15E IT:G

Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x11.5)

封裝: 78-TFBGA

庫存21,336

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

667MHz

-

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x11.5)

IDT71V432S7PF8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 7NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1Mb (32K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7ns
Voltage - Supply: 3.135 V ~ 3.63 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存5,280

SRAM

SRAM - Synchronous

1Mb (32K x 32)

Parallel

-

7ns

3.135 V ~ 3.63 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS62WV12816BLL-55BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 55NS 48MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (6x8)

封裝: 48-TFBGA

庫存12,792

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

55ns

2.5 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (6x8)

AT28C64B-15SA

Microchip Technology

IC EEPROM 64KBIT 150NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.295", 7.50mm Width)

庫存5,040

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

150ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

MT52L256M64D2QA-125 XT:B

Micron Technology Inc.

IC SDRAM 16GBIT 800MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,776

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

800MHz

-

1.2V

-

71T75902S85BG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存3,408

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

-

8.5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

CY7C1041G18-15ZSXIT

Cypress Semiconductor Corp

ASYNC SRAMS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,136

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

15ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

-

N25Q256A73ESF40F TR

Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (64M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存3,808

FLASH

FLASH - NOR

256Mb (64M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

M29W320DB70N6E

Micron Technology Inc.

IC FLASH 32MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存13,872

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

71V124SA12YGI8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

封裝: 32-BSOJ (0.400", 10.16mm Width)

庫存3,600

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

SST26WF016BAT-104I/SN

Microchip Technology

IC FLASH 16MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存78,816

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

25C040T/SN

Microchip Technology

IC EEPROM 4KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,472

EEPROM

4Kb (512 x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

25AA02UIDT-I/SN

Microchip Technology

IC EEPROM 2KBIT 10MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,824

EEPROM

2Kb (256 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS61LPS12836A-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

庫存29,364

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

IS43TR16128BL-125KBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存6,276

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

DS24B33S+

Maxim Integrated

IC EEPROM 4KBIT 1WIRE 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: 2.8 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存400,200

EEPROM

4Kb (256 x 16)

1-Wire?

-

2µs

2.8 V ~ 5.25 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO

MT53D512M64D4NW-046 WT:D

Micron Technology Inc.

IC DRAM 32G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,952

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

25LC040A/W16K

Microchip Technology

IC EEPROM 4K SPI 10MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存5,840

EEPROM

4Kb (512 x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

Die

MTFC8GLWDQ-3L AAT A

Micron Technology Inc.

MODULE EMMC 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

封裝: 100-LBGA

庫存4,992

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

MT53E1G32D4NQ-053-RS-WT-J

Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NS24LS256C4JYTRG

onsemi

IC EEPROM 256KB I2C CMOS 4WLCSP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WLCSP (1x1)

封裝: -

Request a Quote

-

Surface Mount

4-XFBGA, WLCSP

4-WLCSP (1x1)

CG8632AAT

Infineon Technologies

IC PSOC4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NLQ46PFS-8NET

Insignis Technology Corporation

LPDDR4 4GB X16 2400MHZ CL16 10X1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.2 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-FBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

4Gbit

LVSTL

1.2 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

0°C ~ 85°C (TC)

Surface Mount

200-WFBGA

200-FBGA (10x14.5)

24CW160T-I-Q4B

Microchip Technology

16 KBIT I2C SERIAL EEPROM WITH S

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450 ns
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封裝: -

庫存15,000

EEPROM

16Kbit

I2C

1 MHz

5ms

450 ns

1.6V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

S70FS01GSDSBHI213

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: 2ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封裝: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI

80 MHz

2ms

6 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)