頁 503 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
A2C00058602 A	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,440	-	-	-	-	-	-	-	-	-	-	-	-
IDT70825L25PF	IDT, Integrated Device Technology Inc	IC SARAM 128KBIT 25NS 80TQFP Memory Type: Volatile Memory Format: RAM Technology: SARAM Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封裝: 80-LQFP	庫存5,072	RAM	SARAM	128Kb (8K x 16)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
6116LA15SOGI8	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 15NS 24SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	封裝: 24-SOIC (0.295", 7.50mm Width)	庫存5,952	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
STK15C88-SF45	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 45NS 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOIC	封裝: 28-SOIC (0.342", 8.69mm Width)	庫存7,936	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOIC
AT93C56AY1-10YI-1.8	Microchip Technology	IC EEPROM 2KBIT 2MHZ 8MAP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-MAP (3x4.9)	封裝: 8-UDFN Exposed Pad	庫存2,640	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	10ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-MAP (3x4.9)
AT25256W-10SC	Microchip Technology	IC EEPROM 256KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存2,688	EEPROM	EEPROM	256Kb (32K x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AT28C17-15PC	Microchip Technology	IC EEPROM 16KBIT 150NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	封裝: 28-DIP (0.600", 15.24mm)	庫存4,928	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	1ms	150ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
MT29E1T208ECHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 1.125TBIT 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1.125Tb (144G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,704	FLASH	FLASH - NAND	1.125Tb (144G x 8)	Parallel	-	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
71256L55DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 55NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存5,712	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71V65603S133BGI	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存7,680	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
7140LA35J8	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封裝: 52-LCC (J-Lead)	庫存5,648	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
EDB5432BEPA-1DIT-F-R TR	Micron Technology Inc.	IC SDRAM 512MBIT 533MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	封裝: 168-WFBGA	庫存2,624	DRAM	SDRAM - Mobile LPDDR2	512Mb (16M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MX25V8035ZNI-15G	Macronix	IC FLASH 8MBIT 66MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 300µs, 6ms Access Time: - Voltage - Supply: 2.25 V ~ 2.75 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封裝: 8-WDFN Exposed Pad	庫存6,216	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	66MHz	300µs, 6ms	-	2.25 V ~ 2.75 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
93LC86BT-E/OT	Microchip Technology	IC EEPROM 16KBIT 3MHZ SOT23-6 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封裝: SOT-23-6	庫存3,952	EEPROM	EEPROM	16Kb (1K x 16)	SPI	3MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-6	SOT-23-6
RM24C64C-LCSI-T	Adesto Technologies	IC EEPROM 64KBIT 1MHZ 6WLCSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64kb (32B Page Size) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 100µs, 1.2ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP	封裝: 6-XFBGA, WLCSP	庫存7,872	EEPROM	EEPROM	64kb (32B Page Size)	I2C	1MHz	100µs, 1.2ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	6-XFBGA, WLCSP	6-WLCSP
AT25DN512C-SSHF-B	Adesto Technologies	IC FLASH 512KBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 8µs, 1.75ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,656	FLASH	FLASH	512Kb (64K x 8)	SPI	104MHz	8µs, 1.75ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT29F8G08ABACAH4:C TR	Micron Technology Inc.	IC FLASH 8GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封裝: 63-VFBGA	庫存5,104	FLASH	FLASH - NAND	8Gb (1G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
S98WS512N0GFW0180G	Cypress Semiconductor Corp	IC MEMORY NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,784	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1G32D2NP-046-WT-A-TR	Micron Technology Inc.	IC DRAM 32GBIT 2.133GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	32Gbit	-	2.133 GHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
M25P80-VMN3TPB	Alliance Memory, Inc.	IC FLASH 8MBIT SPI 75MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 75 MHz Write Cycle Time - Word, Page: 5ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: -	庫存3,528	FLASH	FLASH - NOR	8Mbit	SPI	75 MHz	5ms	6 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BR24H64F-5ACE2	Rohm Semiconductor	IC EEPROM 64KBIT I2C 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 3.5ms Access Time: - Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存6,000	EEPROM	EEPROM	64Kbit	I2C	1 MHz	3.5ms	-	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
CY7C188-25VC	Cypress Semiconductor Corp	IC SRAM 288KBIT PARALLEL 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 288Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 32-SOJ	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	288Kbit	Parallel	-	25ns	25 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	32-BSOJ (0.300", 7.62mm Width)	32-SOJ
MT25QU256ABA8E12-MAAT	Micron Technology Inc.	IC FLASH 256MBIT SPI 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.8ms Access Time: 5 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O	166 MHz	1.8ms	5 ns	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT40A8G4CLU-075H-E-TR	Micron Technology Inc.	IC DRAM 32GBIT PARALLEL 78FBGA Memory Type: Non-Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 1.33 GHz Write Cycle Time - Word, Page: - Access Time: 27 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	封裝: -	Request a Quote	DRAM	SDRAM - DDR4	32Gbit	Parallel	1.33 GHz	-	27 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
GS81302D18GE-350I	GSI Technology Inc.	IC SRAM 144MBIT PAR 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 144Mbit Memory Interface: Parallel Clock Frequency: 350 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x17)	封裝: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous	144Mbit	Parallel	350 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x17)
MT53E512M32D1ZW-046BAUT-B	Micron Technology Inc.	IC DRAM 16GBIT 2.133GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	16Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 125°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
HMI-65262-9	Harris Corporation	16K X 1 ASYNCHRONOUS CMOS SRAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
24FC16T-E-MS	Microchip Technology	IC EEPROM 16KBIT I2C 1MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 450 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: -	Request a Quote	EEPROM	EEPROM	16Kbit	I2C	1 MHz	5ms	450 ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP

A2C00058602 A

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,440

-

IDT70825L25PF

IDT, Integrated Device Technology Inc

IC SARAM 128KBIT 25NS 80TQFP

Memory Type: Volatile
Memory Format: RAM
Technology: SARAM
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封裝: 80-LQFP

庫存5,072

RAM

SARAM

128Kb (8K x 16)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

6116LA15SOGI8

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 15NS 24SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC

封裝: 24-SOIC (0.295", 7.50mm Width)

庫存5,952

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

24-SOIC (0.295", 7.50mm Width)

24-SOIC

STK15C88-SF45

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.342", 8.69mm Width)

庫存7,936

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOIC

AT93C56AY1-10YI-1.8

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8MAP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-MAP (3x4.9)

封裝: 8-UDFN Exposed Pad

庫存2,640

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

10ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-MAP (3x4.9)

AT25256W-10SC

Microchip Technology

IC EEPROM 256KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存2,688

EEPROM

256Kb (32K x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AT28C17-15PC

Microchip Technology

IC EEPROM 16KBIT 150NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

封裝: 28-DIP (0.600", 15.24mm)

庫存4,928

EEPROM

16Kb (2K x 8)

Parallel

-

1ms

150ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

MT29E1T208ECHBBJ4-3:B TR

Micron Technology Inc.

IC FLASH 1.125TBIT 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1.125Tb (144G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,704

FLASH

FLASH - NAND

1.125Tb (144G x 8)

Parallel

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

71256L55DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存5,712

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71V65603S133BGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存7,680

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

7140LA35J8

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封裝: 52-LCC (J-Lead)

庫存5,648

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

EDB5432BEPA-1DIT-F-R TR

Micron Technology Inc.

IC SDRAM 512MBIT 533MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

封裝: 168-WFBGA

庫存2,624

DRAM

SDRAM - Mobile LPDDR2

512Mb (16M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MX25V8035ZNI-15G

Macronix

IC FLASH 8MBIT 66MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 300µs, 6ms
Access Time: -
Voltage - Supply: 2.25 V ~ 2.75 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封裝: 8-WDFN Exposed Pad

庫存6,216

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

66MHz

300µs, 6ms

-

2.25 V ~ 2.75 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

93LC86BT-E/OT

Microchip Technology

IC EEPROM 16KBIT 3MHZ SOT23-6

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封裝: SOT-23-6

庫存3,952

EEPROM

16Kb (1K x 16)

SPI

3MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-6

RM24C64C-LCSI-T

Adesto Technologies

IC EEPROM 64KBIT 1MHZ 6WLCSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64kb (32B Page Size)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 100µs, 1.2ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP

封裝: 6-XFBGA, WLCSP

庫存7,872

EEPROM

64kb (32B Page Size)

I2C

1MHz

100µs, 1.2ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

6-XFBGA, WLCSP

6-WLCSP

AT25DN512C-SSHF-B

Adesto Technologies

IC FLASH 512KBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 1.75ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,656

FLASH

512Kb (64K x 8)

SPI

104MHz

8µs, 1.75ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT29F8G08ABACAH4:C TR

Micron Technology Inc.

IC FLASH 8GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封裝: 63-VFBGA

庫存5,104

FLASH

FLASH - NAND

8Gb (1G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

S98WS512N0GFW0180G

Cypress Semiconductor Corp

IC MEMORY NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,784

-

MT53E1G32D2NP-046-WT-A-TR

Micron Technology Inc.

IC DRAM 32GBIT 2.133GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封裝: -

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DRAM

SDRAM - Mobile LPDDR4

32Gbit

-

2.133 GHz

-

1.1V

-30°C ~ 85°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

M25P80-VMN3TPB

Alliance Memory, Inc.

IC FLASH 8MBIT SPI 75MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 75 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: -

庫存3,528

FLASH

FLASH - NOR

8Mbit

SPI

75 MHz

5ms

6 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BR24H64F-5ACE2

Rohm Semiconductor

IC EEPROM 64KBIT I2C 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 3.5ms
Access Time: -
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存6,000

EEPROM

64Kbit

I2C

1 MHz

3.5ms

-

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

CY7C188-25VC

Cypress Semiconductor Corp

IC SRAM 288KBIT PARALLEL 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 288Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ

封裝: -

Request a Quote

SRAM

SRAM - Asynchronous

288Kbit

Parallel

-

25ns

25 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

32-BSOJ (0.300", 7.62mm Width)

32-SOJ

MT25QU256ABA8E12-MAAT

Micron Technology Inc.

IC FLASH 256MBIT SPI 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封裝: -

Request a Quote

FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O

166 MHz

1.8ms

5 ns

1.7V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT40A8G4CLU-075H-E-TR

Micron Technology Inc.

IC DRAM 32GBIT PARALLEL 78FBGA

Memory Type: Non-Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 1.33 GHz
Write Cycle Time - Word, Page: -
Access Time: 27 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

封裝: -

Request a Quote

DRAM

SDRAM - DDR4

32Gbit

Parallel

1.33 GHz

-

27 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

GS81302D18GE-350I

GSI Technology Inc.

IC SRAM 144MBIT PAR 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 144Mbit
Memory Interface: Parallel
Clock Frequency: 350 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x17)

封裝: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous

144Mbit

Parallel

350 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x17)

MT53E512M32D1ZW-046BAUT-B

Micron Technology Inc.

IC DRAM 16GBIT 2.133GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

16Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 125°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

HMI-65262-9

Harris Corporation

16K X 1 ASYNCHRONOUS CMOS SRAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

24FC16T-E-MS

Microchip Technology

IC EEPROM 16KBIT I2C 1MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: -

Request a Quote

EEPROM

16Kbit

I2C

1 MHz

5ms

450 ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP