頁 1977 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EDBM432B3PF-1D-F-D	Micron Technology Inc.	IC SDRAM 12GBIT 533MHZ 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 12Gb (384M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-FBGA (12x12)	封裝: 168-VFBGA	庫存3,040	DRAM	SDRAM - Mobile LPDDR2	12Gb (384M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-FBGA (12x12)
IS66WVE4M16BLL-70BLI-TR	ISSI, Integrated Silicon Solution Inc	IC PSRAM 64MBIT 70NS 48BGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封裝: 48-TFBGA	庫存4,960	PSRAM	PSRAM (Pseudo SRAM)	64Mb (4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS61DDB41M36A-300M3LI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 36MBIT 300MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (15x17)	封裝: 165-LBGA	庫存2,176	SRAM	SRAM - Synchronous, DDR II	36Mb (1M x 36)	Parallel	300MHz	-	8.4ns	1.71 V ~ 1.89 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-LFBGA (15x17)
STK16C88-WF25	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 25NS 28DIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-DIP	封裝: 28-DIP (0.600", 15.24mm)	庫存23,340	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	28-DIP (0.600", 15.24mm)	28-DIP
AT45DB041D-SSU	Microchip Technology	IC FLASH 4MBIT 66MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (264 Bytes x 2048 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存1,054,272	FLASH	FLASH	4Mb (264 Bytes x 2048 pages)	SPI	66MHz	4ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PCF8598C-2P/02,112	NXP	IC EEPROM 8KBIT 100KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 100kHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 6.0 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封裝: 8-DIP (0.300", 7.62mm)	庫存7,440	EEPROM	EEPROM	8Kb (1K x 8)	I2C	100kHz	-	-	2.5 V ~ 6.0 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
AT49BV802A-70CI	Microchip Technology	IC FLASH 8MBIT 70NS 48CBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 70ns Voltage - Supply: 2.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 48-VFBGA, CSBGA Supplier Device Package: 48-CBGA (6x8)	封裝: 48-VFBGA, CSBGA	庫存5,296	FLASH	FLASH	8Mb (1M x 8, 512K x 16)	Parallel	-	200µs	70ns	2.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	48-VFBGA, CSBGA	48-CBGA (6x8)
MT48LC2M32B2P-6 IT:G TR	Micron Technology Inc.	IC SDRAM 64MBIT 167MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: 86-TFSOP (0.400", 10.16mm Width)	庫存3,184	DRAM	SDRAM	64Mb (2M x 32)	Parallel	167MHz	12ns	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
MT28F128J3FS-12 MET	Micron Technology Inc.	IC FLASH 128MBIT 120NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 128Mb (16M x 8, 8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-FBGA Supplier Device Package: 64-FBGA (10x13)	封裝: 64-FBGA	庫存17,292	FLASH	FLASH	128Mb (16M x 8, 8M x 16)	Parallel	-	-	120ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-FBGA	64-FBGA (10x13)
MT47H64M8CB-5E IT:B TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 600ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-FBGA Supplier Device Package: 60-FBGA	封裝: 60-FBGA	庫存6,608	DRAM	SDRAM - DDR2	512Mb (64M x 8)	Parallel	200MHz	15ns	600ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-FBGA	60-FBGA
AT27C010L-15JC	Microchip Technology	IC OTP 1MBIT 150NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存2,944	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	150ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
IS61NLF51236B-7.5TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	封裝: 100-LQFP	庫存6,880	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
25LC512T-M/SN	Microchip Technology	IC EEPROM 512KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,152	EEPROM	EEPROM	512Kb (64K x 8)	SPI	20MHz	5ms	-	2.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S29GL032N11TFIV10	Cypress Semiconductor Corp	IC FLASH 32MBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	封裝: 56-TFSOP (0.724", 18.40mm Width)	庫存4,768	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
AS7C1024B-12JIN	Alliance Memory, Inc.	IC SRAM 1MBIT 12NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	封裝: 32-BSOJ (0.400", 10.16mm Width)	庫存5,520	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
CAT24C04HU4I-GT3	ON Semiconductor	IC EEPROM 4KBIT 400KHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN-EP (2x3)	封裝: 8-UFDFN Exposed Pad	庫存200,916	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN-EP (2x3)
AT93C46DY6-YH-T	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8MINIMAP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8, 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-Mini Map (2x3)	封裝: 8-UFDFN Exposed Pad	庫存58,356	EEPROM	EEPROM	1Kb (128 x 8, 64 x 16)	SPI	2MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-Mini Map (2x3)
FT24C02A-USG-B	Fremont Micro Devices USA	IC EEPROM 2KBIT 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存47,784	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
S29GL256S10DHV023	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	封裝: 64-LBGA	庫存4,048	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
S25FL001D0FMAI001	Cypress Semiconductor Corp	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,968	-	-	-	-	-	-	-	-	-	-	-	-
MT29VZZZAD8DQKSM-053 W ES.9D8	Micron Technology Inc.	ALL IN ONE MCP 544G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,448	-	-	-	-	-	-	-	-	-	-	-	-
MT40A4G8KVA-083H:G TR	Micron Technology Inc.	IC DRAM 32G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,248	DRAM	SDRAM - DDR4	32Gb (4G x 8)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
NM93C56AVM8X	Fairchild Semiconductor	IC EEPROM 2KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: Microwire Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	EEPROM	EEPROM	2Kbit	Microwire	1 MHz	10ms	-	4.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AF064GEC5X-2001EX	ATP Electronics, Inc.	IC FLASH 512GBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 512Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 153-FBGA Supplier Device Package: 153-BGA (11.5x13)	封裝: -	Request a Quote	FLASH	FLASH - NAND (MLC)	512Gbit	eMMC	-	-	-	-	-40°C ~ 105°C	Surface Mount	153-FBGA	153-BGA (11.5x13)
13L77AA-C	ProLabs	HP 13L77AA Compatible 8GB DDR4-3 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GD25VQ16CTIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 16MBIT SPI/QUAD 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	FLASH	FLASH - NOR	16Mbit	SPI - Quad I/O	104 MHz	50µs, 3ms	-	2.3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
R1LP0408CSB-5UC-D0	Renesas Electronics Corporation	STANDARD SRAM, 512KX8, 55NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S70GL02GT11FHB020	Infineon Technologies	IC FLASH 2GBIT PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	封裝: -	Request a Quote	FLASH	FLASH - NOR	2Gbit	Parallel	-	-	110 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)

EDBM432B3PF-1D-F-D

Micron Technology Inc.

IC SDRAM 12GBIT 533MHZ 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 12Gb (384M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-FBGA (12x12)

封裝: 168-VFBGA

庫存3,040

DRAM

SDRAM - Mobile LPDDR2

12Gb (384M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-FBGA (12x12)

IS66WVE4M16BLL-70BLI-TR

ISSI, Integrated Silicon Solution Inc

IC PSRAM 64MBIT 70NS 48BGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封裝: 48-TFBGA

庫存4,960

PSRAM

PSRAM (Pseudo SRAM)

64Mb (4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS61DDB41M36A-300M3LI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 36MBIT 300MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)

封裝: 165-LBGA

庫存2,176

SRAM

SRAM - Synchronous, DDR II

36Mb (1M x 36)

Parallel

300MHz

-

8.4ns

1.71 V ~ 1.89 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-LFBGA (15x17)

STK16C88-WF25

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 25NS 28DIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-DIP

封裝: 28-DIP (0.600", 15.24mm)

庫存23,340

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

28-DIP (0.600", 15.24mm)

28-DIP

AT45DB041D-SSU

Microchip Technology

IC FLASH 4MBIT 66MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (264 Bytes x 2048 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存1,054,272

FLASH

4Mb (264 Bytes x 2048 pages)

SPI

66MHz

4ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PCF8598C-2P/02,112

NXP

IC EEPROM 8KBIT 100KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 6.0 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

庫存7,440

EEPROM

8Kb (1K x 8)

I2C

100kHz

-

2.5 V ~ 6.0 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

AT49BV802A-70CI

Microchip Technology

IC FLASH 8MBIT 70NS 48CBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 70ns
Voltage - Supply: 2.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA, CSBGA
Supplier Device Package: 48-CBGA (6x8)

封裝: 48-VFBGA, CSBGA

庫存5,296

FLASH

8Mb (1M x 8, 512K x 16)

Parallel

-

200µs

70ns

2.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

48-VFBGA, CSBGA

48-CBGA (6x8)

MT48LC2M32B2P-6 IT:G TR

Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

庫存3,184

DRAM

SDRAM

64Mb (2M x 32)

Parallel

167MHz

12ns

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

MT28F128J3FS-12 MET

Micron Technology Inc.

IC FLASH 128MBIT 120NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 128Mb (16M x 8, 8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-FBGA
Supplier Device Package: 64-FBGA (10x13)

封裝: 64-FBGA

庫存17,292

FLASH

128Mb (16M x 8, 8M x 16)

Parallel

-

120ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-FBGA

64-FBGA (10x13)

MT47H64M8CB-5E IT:B TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 600ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA

封裝: 60-FBGA

庫存6,608

DRAM

SDRAM - DDR2

512Mb (64M x 8)

Parallel

200MHz

15ns

600ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-FBGA

AT27C010L-15JC

Microchip Technology

IC OTP 1MBIT 150NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存2,944

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

150ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

IS61NLF51236B-7.5TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

封裝: 100-LQFP

庫存6,880

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

25LC512T-M/SN

Microchip Technology

IC EEPROM 512KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,152

EEPROM

512Kb (64K x 8)

SPI

20MHz

5ms

-

2.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S29GL032N11TFIV10

Cypress Semiconductor Corp

IC FLASH 32MBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

封裝: 56-TFSOP (0.724", 18.40mm Width)

庫存4,768

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

AS7C1024B-12JIN

Alliance Memory, Inc.

IC SRAM 1MBIT 12NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

封裝: 32-BSOJ (0.400", 10.16mm Width)

庫存5,520

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

CAT24C04HU4I-GT3

ON Semiconductor

IC EEPROM 4KBIT 400KHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN-EP (2x3)

封裝: 8-UFDFN Exposed Pad

庫存200,916

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN-EP (2x3)

AT93C46DY6-YH-T

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8MINIMAP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8, 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-Mini Map (2x3)

封裝: 8-UFDFN Exposed Pad

庫存58,356

EEPROM

1Kb (128 x 8, 64 x 16)

SPI

2MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-Mini Map (2x3)

FT24C02A-USG-B

Fremont Micro Devices USA

IC EEPROM 2KBIT 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存47,784

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

S29GL256S10DHV023

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

封裝: 64-LBGA

庫存4,048

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

S25FL001D0FMAI001

Cypress Semiconductor Corp

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,968

-

MT29VZZZAD8DQKSM-053 W ES.9D8

Micron Technology Inc.

ALL IN ONE MCP 544G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,448

-

MT40A4G8KVA-083H:G TR

Micron Technology Inc.

IC DRAM 32G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,248

DRAM

SDRAM - DDR4

32Gb (4G x 8)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

NM93C56AVM8X

Fairchild Semiconductor

IC EEPROM 2KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: Microwire
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

EEPROM

2Kbit

Microwire

1 MHz

10ms

-

4.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AF064GEC5X-2001EX

ATP Electronics, Inc.

IC FLASH 512GBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 512Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 153-FBGA
Supplier Device Package: 153-BGA (11.5x13)

封裝: -

Request a Quote

FLASH

FLASH - NAND (MLC)

512Gbit

eMMC

-

-40°C ~ 105°C

Surface Mount

153-FBGA

153-BGA (11.5x13)

13L77AA-C

ProLabs

HP 13L77AA Compatible 8GB DDR4-3

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

GD25VQ16CTIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

FLASH

FLASH - NOR

16Mbit

SPI - Quad I/O

104 MHz

50µs, 3ms

-

2.3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

R1LP0408CSB-5UC-D0

Renesas Electronics Corporation

STANDARD SRAM, 512KX8, 55NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

S70GL02GT11FHB020

Infineon Technologies

IC FLASH 2GBIT PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

封裝: -

Request a Quote

FLASH

FLASH - NOR

2Gbit

Parallel

-

110 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)